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NewSemi Technology
EZ850-p
EZ850-p
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FEATURES:
- Lambertian Radiation Pattern
- Anode-up design (p-pad up)
- EZBright LED Technology, binned @ 350 mA
- 450 nm – 520+ mW
- 460 nm – 500+ mW
- 470 nm – 480+ mW
- Low Forward Voltage (Vf) – 3.2 V Typical at 350 mA
- Maximum DC Forward Current – 1000 mA
- Backside Metal versions for various attach methods:
- -A (AuSn) for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms
- -G (LTDA) for Low Temperature Flux Eutectic Attach

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