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EZ1950-p

EZ1950-p

Features:

  • Lambertian radiation pattern
  • Anode-up design (p-pad up)
  • EZBright LED technology, binned @ 700 mA 
    • 450 nm – 1120+ mW
    • 460 nm – 1120+ mW
  • Low forward voltage (VF) – 3.2 V typical at 700 mA
  • Maximum DC forward current: 3000 mA
  • Backside metal versions for various attach methods:
    • A (AuSn) for use with conductive adhesives, flux eutectic attach, solder paste and solder preforms
    • G (LTDA) for low-temperature flux eutectic attach