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About Us
Power-Semiconductors
GaN-on-Si HEMT
650V
150V
100V
60V
40V
30V
Silicon FET
Opto-Semiconductors
Infrared LED Chips
Photodiode Chips
Phototransistor Chips
CREE LED Chips
EZ Series - P side up
EZ Series - N side up
TR Series
RT Series
UT Series
MB Series
CB Series
White Color Chips
FOCUS LIGHTINGS
OS Component/Module
General Application
Ceramic Type
EMC Type
PLCC Type
SMD Type
Ultraviolet
ODM Service
LED with AEC-Q
AIoT
Ouster LiDAR
Outsight Software
Contact Us
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EZ1012-P bar
Regular price
$0.00
Default Title -
$0.00 TWD
FEATURES
Lambertian Radiation Pattern
Anode-up (p-up) p-bar design for an unobstructed emitting area and improved compatibility with phosphor sheet
EZBright LED Technology, binned @ 350 mA
– 450 nm – 580+ mW
– 460 nm – 580+ mW
– 470 nm – 520+ mW
– 527 nm – 140+ mW
Low Forward Voltage (Vf) – 3.1 V Typical at 350 mA
Maximum DC Forward Current – 1500 mA
Backside Metal versions for various attach methods:
-A (AuSn) for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms
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