8" GaN-on-Si HEMT
新勢明科技提供 8 吋 GaN-on-Si HEMT Wafer 和 Bare Die
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HV GaN HEMT |
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|
Part No. |
VDS max (V) |
RDS (on) max (mΩ) |
ID max (A) |
| INN650TA030AH |
650 |
34 |
60 |
| INN700DA240B |
700 |
240 |
10 |
| INN650D080BS |
650 |
80 |
29 |
| INN700D140C |
700 |
140 |
17 |
| INN700D240B |
700 |
240 |
10 |
| INN700TK140C |
700 |
140 |
17 |
| INN700TK240B |
700 |
240 |
10 |
| INN700TK350B |
700 |
350 |
6 |
LV GaN HEMT |
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|
Part No. |
VDS max (V) |
RDS (on) max (mΩ) |
ID max (A) |
| INN030FQ015A |
30 |
1.5 |
60 |
| INN040FQ043A |
40 |
4.3 |
24 |
| INN100W032A |
100 |
3.2 |
60 |
| INN150LA070A |
150 |
7 |
28 |
| INN150FQ070A |
150 |
7 |
60 |
VGaN |
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|
Part No. |
VDS max (V) |
RDS (on) max (mΩ) |
ID max (A) |
| INN040W080A |
40 |
8 |
14 |
| INN040W120A |
40 |
12 |
10 |
| INN040FQ012A |
40 |
1.2 |
100 |
| INV100FQ030A |
100 |
3.2 |
100 |
| INV120EQ035A |
120 |
3.5 |
100 |
SolidGaN |
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|
Part No. |
VDS max (V) |
RDS (on) typ (mΩ) |
ID max (A) |
| ISG3204LA |
100 |
2.4 |
60 |
| INS1001DE |
700 |
6 |
20 |
| INS1011SD |
120 |
8 |
90 |
| INS2002FQ |
100 |
4.5 |
5.5 |